Choi, Joo-Young Kang, Lee-Seung Cho, Kyung-Hoon Seong, Tae-Geun Nahm, Sahn Kang, Chong-Yun Yoon, Seok-Jin Kim, Jong-Hee 2024-01-20T21:02:20Z 2024-01-20T21:02:20Z 2021-09-03 2009-08 0018-9383 https://pubs.kist.re.kr/handle/201004/132267 Mn-doped Bi4Ti3O12 (M-B4T3) films were well formed on a TiN/SiO2/Si substrate at 200 degrees C without buckling using RF magnetron sputtering. The leakage current density of these films was considerably influenced by the oxygen partial pressure (OPP), which was attributed to the presence of oxygen vacancies or oxygen interstitial ions. The film grown under 2.8-mtorr OPP showed the lowest leakage current density. The M-B4T3 films grown at 200 degrees C showed a high dielectric constant of 38 with a low loss in both kilohertz and gigahertz ranges. The 39-nm-thick film showed a high capacitance density of 8.47 fF/mu m(2) at 100 kHz, and its temperature and quadratic voltage coefficients of capacitance were low at approximately 370 ppm/degrees C and 667 ppm/V-2, respectively, with a low leakage current density of 7.8 x 10(-8) A/cm(2) at 2 V. Therefore, the M-B4T3 thin film grown on a TiN/SiO2/Si substrate is a good candidate material for high performance, radio frequency metal-insulator-metal capacitors. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC OXYGEN-PRESSURE PERFORMANCE DEPOSITION ELECTRODE LEAKAGE Structural and Electrical Properties of Mn-Doped Bi4Ti3O12 Thin Film Grown on TiN/SiO2/Si Substrate for RF MIM Capacitors Article 10.1109/TED.2009.2022892 1 IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.8, pp.1631 - 1636 IEEE TRANSACTIONS ON ELECTRON DEVICES 56 8 1631 1636 scie scopus 000268282400010 2-s2.0-68349152790 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article OXYGEN-PRESSURE PERFORMANCE DEPOSITION ELECTRODE LEAKAGE Bi4Ti3O12 high-k metal-insulator-metal (MIM) capacitor temperature coefficient of capacitance (TCC) voltage coefficient of capacitance (VCC)