Jang, Ho Won Lee, Sanghan Ryu, Seong Wook Son, Jun Ho Song, Yang Hee Lee, Jong-Lam 2024-01-20T21:02:51Z 2024-01-20T21:02:51Z 2021-09-03 2009-08 1099-0062 https://pubs.kist.re.kr/handle/201004/132289 We investigate interfacial band bendings in Al ohmic contacts to laser-irradiated Ga-face and N-face n-GaN using synchrotron radiation photoemission spectroscopy. Both samples show increased band bendings after annealing at 300 degrees C, but annealing at 500 degrees C leads to completely opposite band bendings. These two different behaviors with annealing temperature are consistent with electrical properties of the contacts and are well explained by the annihilation of N vacancies at the interface and the formation of polarization-induced sheet charges at AlN/GaN heterointerfaces, respectively. English ELECTROCHEMICAL SOC INC LIGHT-EMITTING-DIODES METAL CONTACTS TI/AL CONTACTS Interfacial Band Bendings in Al Ohmic Contacts to Laser-Irradiated Ga-Face and N-Face n-GaN Article 10.1149/1.3206916 1 ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.11, pp.H405 - H407 ELECTROCHEMICAL AND SOLID STATE LETTERS 12 11 H405 H407 scie scopus 000269723600018 2-s2.0-70249135597 Electrochemistry Materials Science, Multidisciplinary Electrochemistry Materials Science Article LIGHT-EMITTING-DIODES METAL CONTACTS TI/AL CONTACTS aluminium compounds annealing gallium compounds III-V semiconductors ohmic contacts photoelectron spectra semiconductor heterojunctions