Kim, Young-Bae Kim, Jeong-Ung Choi, Duck-Kyun Hong, Jae-Min Kim, Il-Doo 2024-01-20T21:02:57Z 2024-01-20T21:02:57Z 2021-09-01 2009-08 1385-3449 https://pubs.kist.re.kr/handle/201004/132292 We report on the fabrication of low-voltage ZnO thin-film transistors using 1% Ni-doped Ba0.6Sr0.4TiO3 as the gate insulator. The Ni-doped BST, deposited by RF magnetron sputtering at room temperature, significantly reduced leakage current density to less than 6 x 10(-9) A/cm, as compared to a current density of 5 x 10(-4) A/cm for undoped BST films at 0.5 MV/cm. The ZnO thin-film transistor with the Ni-doped BST gate insulator exhibited a very low operating voltage of 4 V. The field-effect mobility, the current on/off ratio and subthreshold swing were 2.2 cm(2) V/s, 1.2 x 10(6), and 0.21 V/dec respectively. English SPRINGER ORGANIC TRANSISTORS ROOM-TEMPERATURE CHANNEL Electrically stable low voltage operating ZnO thin film transistors with low leakage current Ni-doped Ba0.6Sr0.4TiO3 gate insulator Article 10.1007/s10832-008-9538-7 1 JOURNAL OF ELECTROCERAMICS, v.23, no.1, pp.76 - 79 JOURNAL OF ELECTROCERAMICS 23 1 76 79 scie scopus 000268772500013 2-s2.0-71449098250 Materials Science, Ceramics Materials Science Article ORGANIC TRANSISTORS ROOM-TEMPERATURE CHANNEL Transistor ZnO Low voltage operation Gate insulator