Yang, Min Kyu Park, Jae-Wan Ko, Tae Kuk Lee, Jeon-Kook 2024-01-20T21:03:10Z 2024-01-20T21:03:10Z 2021-09-03 2009-07-27 0003-6951 https://pubs.kist.re.kr/handle/201004/132300 This study examined the electrical properties of Ti/MnO2/Pt devices with stable and reproducible bipolar resistive switching behavior. The dependency of the memory behavior on the cell area and operating temperature suggest that the conducting mechanism in the low resistance states is due to the locally conducting filaments formed. X-ray photoelectron spectroscopy showed that nonlattice oxygen ions form at the MnO2 surface. The mechanism of resistance switching in the system examined involves the generation and recovery of oxygen vacancies with the nonlattice oxygen ions. English AMER INST PHYSICS FILMS THIN Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices Article 10.1063/1.3191674 1 APPLIED PHYSICS LETTERS, v.95, no.4 APPLIED PHYSICS LETTERS 95 4 scie scopus 000268611900033 2-s2.0-68249119187 Physics, Applied Physics Article FILMS THIN ferroelectric storage ferroelectric switching manganese compounds MIM structures platinum random-access storage titanium vacancies (crystal) X-ray photoelectron spectra