Yuk, J. M. No, Y. S. Kim, T. W. Kim, J. Y. Choi, W. K. 2024-01-20T21:03:54Z 2024-01-20T21:03:54Z 2022-01-25 2009-07 0374-4884 https://pubs.kist.re.kr/handle/201004/132328 Selected-area electron diffraction patterns for ZnO/Si heterostructures annealed at 800 degrees C showed that 30 degrees rotation domains were generated in the ZnO thin films. The plane-view high-resolution transmission electron microscopy (HRTEM) images for the ZnO thin films grown on n-Si substrates annealed at 800 degrees C showed that asymmetrical tilt grain boundaries were tilted by 16.5 degrees and 13.5 degrees from two grains with a 30 degrees tilted angle. The grain boundary planes of the two grains were (35 (8) over bar0) and (23 (5) over bar0). The atomic arrangements of the asymmetrically-tilted grain boundaries in 30 degrees rotation domains of ZnO thin films grown on n-Si substrates annealed at 800 degrees C are described on the basis of the HRTEM results. English KOREAN PHYSICAL SOC OPTICAL-PROPERTIES EPITAXIAL-FILMS BUFFER LAYER TEMPERATURE DEPENDENCE EMISSION EDGE Atomic Arrangements of Asymmetrically-tilted Grain Boundaries in 30 degrees Rotation Domains of ZnO Thin Films Grown on n-Si Substrates Article 10.3938/jkps.55.246 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.1, pp.246 - 249 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 55 1 246 249 scie scopus kci ART001498242 000268023600054 2-s2.0-69249161979 Physics, Multidisciplinary Physics Article; Proceedings Paper OPTICAL-PROPERTIES EPITAXIAL-FILMS BUFFER LAYER TEMPERATURE DEPENDENCE EMISSION EDGE ZnO thin film Si substrate Rotation domain Grain boundary Atomic arrangement