Han, Doug Seok Koo, Hyun Cheol Lee, Sol Chang, Joonyeon Han, Suk-Hee Kim, Eun Kyu Eom, Jonghwa 2024-01-20T21:04:36Z 2024-01-20T21:04:36Z 2021-09-03 2009-07 0374-4884 https://pubs.kist.re.kr/handle/201004/132358 A new fabrication method to make a submicron-sized lateral spin-valve device is presented. In this method, magnetic patterns with nano-scaled channel lengths are implemented with Vanadium hard mask. For the non-local geometry, a Delta R of 4 m Omega is detected and for the local spin-valve geometry, magnetoresistance of 0.1% is obtained at T = 10 K. Due to the sharp magnetization switching of the flat ferromagnet, clear spin signal transitions between parallel and antiparallel alignments are observed. A quantitative analysis, including the spin-orbit interaction parameter, indicates the feasibility of spin transistor applications. English KOREAN PHYSICAL SOC DIFFUSION Spin Transport in a Submicron-sized Structure Using Vanadium Metal Masks Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.1, pp.207 - 211 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 55 1 207 211 scie scopus kci ART001498212 000268023600046 2-s2.0-69249232554 Physics, Multidisciplinary Physics Article; Proceedings Paper DIFFUSION Spin accumulation Spin diffusion Two-dimensional electron gas Vanadium metal mask