Lee, Eui-Bok Ju, Byeong-Kwon Kim, Yong-Tae 2024-01-20T21:04:43Z 2024-01-20T21:04:43Z 2021-09-03 2009-07 0167-9317 https://pubs.kist.re.kr/handle/201004/132363 Effects of Se contents in Ge-Se-Te ternary systems are investigated using edge contact type phase change random access memory cell structures. Increasing the Se content from 6 to 35 at% crystallization temperature and Ovonic switching threshold voltage are increased due to the large grain growth of hexagonal microstructure in the Ge-Se-Te alloys. (C) 2009 Elsevier B.V. All rights reserved. English ELSEVIER MEMORY CRYSTALLIZATION SB Phase change and electrical characteristics of Ge-Se-Te alloys Article 10.1016/j.mee.2009.03.089 1 MICROELECTRONIC ENGINEERING, v.86, no.7-9, pp.1950 - 1953 MICROELECTRONIC ENGINEERING 86 7-9 1950 1953 scie scopus 000267460100111 2-s2.0-67349118350 Engineering, Electrical & Electronic Nanoscience & Nanotechnology Optics Physics, Applied Engineering Science & Technology - Other Topics Optics Physics Article; Proceedings Paper MEMORY CRYSTALLIZATION SB Phase change materials Ge-Se-Te alloys Chalcogenide