Gautam, S. Thakur, P. Chae, K. H. Chang, G. S. Subramanain, M. Jayavel, R. Asokan, K. 2024-01-20T21:04:49Z 2024-01-20T21:04:49Z 2021-09-03 2009-07 0374-4884 https://pubs.kist.re.kr/handle/201004/132367 The electronic structure of Co-doped ZuO thin films, synthesized with a nominal composition of Zn1-xCoxO (x = 0.03, 0.05, 0.7; 0.10, and 0.15) by using spray pyrolysis method, has been investigated using near edge X-ray absorption fine structure (NEXAFS) measurements at the O K- and the Co L-3,L-2-edges and using resonant inelastic X-ray scattering (RIXS) measurements at Co L-3,L-2-edge. All the prepared Zn1-xCoxO thin Films showed ferromagnetic behavior at room temperature, as measured by using an alternating gradient force magnetometer (AGFM). The intensity of the pre-edge spectral feature at the O K-edge increases with the Co concentration, which clearly reveals that there is strong hybridization of O 2p - Co 3d atoms in the ZnO matrix. Spectral features of the Co L-3,L-2-edge NEXAFS exhibit multiple absorption peaks and are similar to those of Co2+ ions coordinated in tetrahedral symmetry by four oxygen atoms. These results clearly demonstrate that Co is in a 2+ state, substituting at the Zn site. Co L-3,L-2-edge RIXS measurements show that the substitution by Co atoms can explain the magnetic interaction in Co-doped ZnO. English KOREAN PHYSICAL SOC ROOM-TEMPERATURE FERROMAGNETISM DESIGN Electronic Structure of Co-doped ZnO Thin Films by X-ray Absorption and Emission Spectroscopy Article 10.3938/jkps.55.167 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.1, pp.167 - 172 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 55 1 167 172 scie scopus kci ART001595655 000268023600038 2-s2.0-69249185673 Physics, Multidisciplinary Physics Article; Proceedings Paper ROOM-TEMPERATURE FERROMAGNETISM DESIGN X-ray absorption X-ray emission Diluted magnetic semiconductors Oxygen vacancy