Kim, S. -P. Lee, K. -R. Chung, Y. -C. Sahashi, M. Kim, Y. K. 2024-01-20T21:05:42Z 2024-01-20T21:05:42Z 2021-09-01 2009-06-01 0021-8979 https://pubs.kist.re.kr/handle/201004/132404 Deposition and annealing behaviors of Al atoms on rough Cu (111) surface were investigated on the atomic scale by three-dimensional classical molecular dynamics simulation. The rough Cu surface was modeled by depositing 5 ML of Cu on Ta (011) substrate. Most Al atoms deposited on the rough Cu surface placed on the atomic steps, preserving the major features of the surface during Al deposition. This behavior was discussed in terms of the smaller barrier of the surface diffusion than Ehrlich-Schwoebel barrier of Al on Cu (111) surface. By annealing at 700 K, significant intermixing between Al and Cu rapidly occurs with decrease in the surface roughness. This behavior reveals that the exchange process of Al with substrate Cu dominates during the initial stage of high temperature annealing. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3142382] English AMER INST PHYSICS CURRENT-CONFINED-PATH THIN-FILM GROWTH METALS Molecular dynamics simulation study of deposition and annealing behaviors of Al atoms on Cu surface Article 10.1063/1.3142382 1 JOURNAL OF APPLIED PHYSICS, v.105, no.11 JOURNAL OF APPLIED PHYSICS 105 11 scie scopus 000267053200132 2-s2.0-67649522959 Physics, Applied Physics Article CURRENT-CONFINED-PATH THIN-FILM GROWTH METALS MD simulation interface thin film