Lim, Dongwon Kim, Kisu Kim, Sungdong Jeung, Won Young Lee, Seong-Rae 2024-01-20T21:06:17Z 2024-01-20T21:06:17Z 2021-09-03 2009-06 0018-9464 https://pubs.kist.re.kr/handle/201004/132428 We investigated top and bottom exchange biased perpendicularly magnetized magnetic tunnel junctions (pMTJs) with IrMn and the effects of the multilayer structure on the magnetoresistance and perpendicular exchange bias. The TMR ratio of the top exchange biased (TEB)-pMTJ was significantly deteriorated compared with that of the pseudo-pMTJ, due to the high junction resistance and the in-plane anisotropy induced in the Co/IrMn interface. The TMR ratio and perpendicular exchange bias were improved in the bottom exchange biased (BEB)-pMTJ as compared with those of the TEB-pMTJ. Perpendicularly magnetized buffer layers, such as (Pd/Co)(n), should be used to induce perpendicular exchange coupling with antiferromagnets such as IrMn in BEB-pMTJs. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC ANISOTROPY Study on Exchange-Biased Perpendicular Magnetic Tunnel Junction Based on Pd/Co Multilayers Article 10.1109/TMAG.2009.2018590 1 IEEE TRANSACTIONS ON MAGNETICS, v.45, no.6, pp.2407 - 2409 IEEE TRANSACTIONS ON MAGNETICS 45 6 2407 2409 scie scopus 000266329800015 2-s2.0-66549097710 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article; Proceedings Paper ANISOTROPY Exchange biased Pd/Co perpendicular MTJ