Choi, G. M. Shin, K. H. Seo, S. A. Kim, S. O. Lim, W. C. Lee, T. D. 2024-01-20T21:06:34Z 2024-01-20T21:06:34Z 2021-09-03 2009-06 0018-9464 https://pubs.kist.re.kr/handle/201004/132440 High tunneling magnetoresistance (TMR) ratio and low RA in magnetic tunnel junctions are necessary condition for application in magnetic random access memory. To get high TMR ratio and low RA, good quality of MgO (002) insulating layer is important. To increase crystalline quality of MgO (002) layer, we applied negative bias on the substrate during MgO deposition. We report the results of the tunneling magnetoresistance (TMR) ratio and the resistance-area product (RA) for CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with substrate bias voltage, and showed TMR increase and RA decrease with substrate bias. The effects of substrate bias voltage on the TMR ratio, RA and MgO (002) peak intensity are discussed. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC MAGNETIC TUNNEL-JUNCTIONS ROOM-TEMPERATURE MAGNETORESISTANCE DEPENDENCE Substrate Biasing Effect during MgO Deposition in CoFeB/MgO/CoFeB MTJs Article 10.1109/TMAG.2009.2018577 1 IEEE TRANSACTIONS ON MAGNETICS, v.45, no.6, pp.2371 - 2373 IEEE TRANSACTIONS ON MAGNETICS 45 6 2371 2373 scie scopus 000266329800005 2-s2.0-66549101748 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article; Proceedings Paper MAGNETIC TUNNEL-JUNCTIONS ROOM-TEMPERATURE MAGNETORESISTANCE DEPENDENCE Magnetic tunnel junctions (MTJs) resistance-area product (RA) substrate bias tunneling magnetoresistance (TMR)