Shin, Il-Jae Min, Byoung-Chul Hong, Jin-Pyo Shin, Kyung-Ho 2024-01-20T21:06:35Z 2024-01-20T21:06:35Z 2021-09-03 2009-06 0018-9464 https://pubs.kist.re.kr/handle/201004/132441 We have investigated the effect of Ar pressure during MgO sputtering on the tunnel magnetoresistance (TMR) and resistance area (RA) product of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs). The TMR of MTJs with a thin MgO tunnel barrier deposited at different Ar pressures (1.3, 4, 10, and 25 mTorr) shows a consistent relationship with x-ray diffraction (XRD) properties of thick MgO films deposited with the same conditions. The deposition of the MgO-barrier at 1.3 mTorr results in a low TMR ratio and a high RA product due to the disordered MgO barrier and the oxidation of the bottom electrode of the MTJ, while the deposition at 25 mTorr results in a rough MgO barrier, and thereby gives rise to a large shift of switching field of the free layer due to the orange-peel coupling. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC ROOM-TEMPERATURE COFEB Consistent Relationship Between the Tunnel Magnetoresistance of CoFeB/MgO/CoFeB Junctions and X-Ray Diffraction Properties Article 10.1109/TMAG.2009.2018585 1 IEEE TRANSACTIONS ON MAGNETICS, v.45, no.6, pp.2393 - 2395 IEEE TRANSACTIONS ON MAGNETICS 45 6 2393 2395 scie scopus 000266329800011 2-s2.0-66549112924 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article; Proceedings Paper ROOM-TEMPERATURE COFEB Magnetic tunnel junction MgO rf sputtering tunnel magnetoresistance