Moon, Kyoung-Woong Lee, Jae-Chul Jung, Myung-Hwa Shin, Kyung-Ho Choe, Sug-Bong 2024-01-20T21:06:40Z 2024-01-20T21:06:40Z 2021-09-03 2009-06 0018-9464 https://pubs.kist.re.kr/handle/201004/132444 Magnetization reversal in ferromagnetic Permalloy nanowires is experimentally investigated by measurement of the anisotropic magnetoresistance (AMR). Two distinct regimes of the magnetization reversal are observed with respect to the angle of the external magnetic field. For the regime of large angles, the AMR curves exhibit two distinct jumps, evidencing the existence of an intermediate transient state. The intermediate state is in the form of an incoherent magnetization configuration consisting of three domain structures with two Neel walls, due to the inhomogeneous shape anisotropy distribution, as confirmed by a micromagnetic prediction. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC ANISOTROPIC MAGNETORESISTANCE FERROMAGNETIC NANOWIRES THIN-FILMS NUCLEATION MEMORY Incoherent Domain Configuration Along Wire Width in Permalloy Nanowires Article 10.1109/TMAG.2009.2018666 1 IEEE TRANSACTIONS ON MAGNETICS, v.45, no.6, pp.2485 - 2487 IEEE TRANSACTIONS ON MAGNETICS 45 6 2485 2487 scie scopus 000266329800037 2-s2.0-66549116454 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article; Proceedings Paper ANISOTROPIC MAGNETORESISTANCE FERROMAGNETIC NANOWIRES THIN-FILMS NUCLEATION MEMORY Domain configuration magnetization reversal nanowire permalloy