Shin, J. W. Lee, J. Y. No, Y. S. Kim, T. W. Choi, W. K. 2024-01-20T21:30:24Z 2024-01-20T21:30:24Z 2021-09-03 2009-06 0884-2914 https://pubs.kist.re.kr/handle/201004/132451 High-resolution transmission electron microscopy (HRTEM) images of annealed ZnO thin-films showed the domain boundaries of a (01 (1) over bar0) plane with a transition zone and a (01 (1) over bar1) plane without a transition zone. The 30 degrees in-plane rotation domain boundaries were formed in the ZnO thin films because the angle of the c-axis was tilted 3.5 degrees in comparison with that of neighboring 30 degrees in-plane rotation domains to reduce the misfit strain energy. The atomic arrangement variations of 30 degrees in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing are described. English CAMBRIDGE UNIV PRESS ELECTRONIC-STRUCTURE SAPPHIRE EPITAXY Atomic arrangement variations of 30 degrees in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing Article 10.1557/JMR.2009.0233 1 JOURNAL OF MATERIALS RESEARCH, v.24, no.6, pp.2006 - 2010 JOURNAL OF MATERIALS RESEARCH 24 6 2006 2010 scie scopus 000267207900015 2-s2.0-68149126734 Materials Science, Multidisciplinary Materials Science Article ELECTRONIC-STRUCTURE SAPPHIRE EPITAXY domain boundary ZnO Si thermal annealing