Kim, Dong Hun Choi, Seung-Hoon Cho, Nam Gyu Chang, YoungEun Kim, Ho-Gi Hong, Jae-Min Kim, Il-Doo 2024-01-20T21:30:52Z 2024-01-20T21:30:52Z 2021-09-01 2009-06 1099-0062 https://pubs.kist.re.kr/handle/201004/132471 We report on the fabrication and characterization of sputter-deposited poly(methyl methacrylate) (PMMA) thin films used as gate insulators as well as passivation layers in high performance InGaZnO4 thin-film transistors (TFTs). Sputter-deposited PMMA thin films exhibited a dielectric constant of 4.3 and low leakage current characteristics (<similar to 2x10(-8) A/cm(2) at 0.3 MV/cm). The InGaZnO4 TFTs utilizing PMMA gate insulators and PMMA passivation layers exhibited a high on/off current ratio of 4.08x10(6) and a high field-effect mobility of 36.1 cm(2)/V s. Threshold voltage and field-effect mobility remained constant after aging in air atmosphere for 5 months. English ELECTROCHEMICAL SOC INC FIELD-EFFECT TRANSISTORS POLYMER MOBILITY High Stability InGaZnO4 Thin-Film Transistors Using Sputter-Deposited PMMA Gate Insulators and PMMA Passivation Layers Article 10.1149/1.3142470 1 ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.8, pp.H296 - H298 ELECTROCHEMICAL AND SOLID STATE LETTERS 12 8 H296 H298 scie scopus 000266975000018 2-s2.0-67649229450 Electrochemistry Materials Science, Multidisciplinary Electrochemistry Materials Science Article FIELD-EFFECT TRANSISTORS POLYMER MOBILITY ageing gallium compounds indium compounds leakage currents passivation permittivity polymer films semiconductor materials sputter deposition thin film transistors