Kim, Eun Tae Lee, Jeong Yong Kim, Yong Tae 2024-01-20T21:32:13Z 2024-01-20T21:32:13Z 2021-09-03 2009-05 1862-6254 https://pubs.kist.re.kr/handle/201004/132527 A simple layered phase-change random access memory (PRAM) cell was fabricated using the In3Sb1Te2 alloy. The overall resistance value of the reset state was about 70 times larger than that of the set state. The resistance difference between the amorphous and crystalline state was fairly well maintained after 10(2) cycles. Interestingly, the measured current-voltage (I-V) curve showed three obvious steps in the crystalline state. By means of high temperature X-ray diffractometry (HTXRD) and differential scanning calorimetry (DSC) experiments, we confirmed that the current steps originate from successive structural transformations of the In3Sb1Te2 ternary alloy. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim English WILEY-V C H VERLAG GMBH RANDOM-ACCESS MEMORY GE2SB2TE5 FILMS DATA-STORAGE THIN-FILMS CRYSTALLIZATION PRAM Investigation of electrical characteristics of the In3Sb1Te2 ternary alloy for application in phase-change memory Article 10.1002/pssr.200903049 1 PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.3, no.4, pp.103 - 105 PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 3 4 103 105 scie scopus 000266471700011 2-s2.0-71149112548 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Article RANDOM-ACCESS MEMORY GE2SB2TE5 FILMS DATA-STORAGE THIN-FILMS CRYSTALLIZATION PRAM InSbTe phase change memory