Jeong, Doo Seok Schroeder, Herbert Waser, Rainer 2024-01-20T21:32:16Z 2024-01-20T21:32:16Z 2021-09-03 2009-05 1098-0121 https://pubs.kist.re.kr/handle/201004/132529 We suggest a possible mechanism for bipolar switching in a Pt/TiO2/Pt resistive switching cell in terms of electrochemical reactions involving oxygen ions/vacancies. The electrochemical reactions are considered to take place at an interface between Pt and TiO2 solid electrolyte, and they modulate the Schottky barrier height at the interface. Calculation results using this proposed mechanism can explain a bipolar switching behavior and semiquantitatively describe experimental data. English AMER PHYSICAL SOC OXYGEN RESISTANCE SRTIO3 Mechanism for bipolar switching in a Pt/TiO2/Pt resistive switching cell Article 10.1103/PhysRevB.79.195317 1 PHYSICAL REVIEW B, v.79, no.19 PHYSICAL REVIEW B 79 19 scie scopus 000266501300089 2-s2.0-67649133369 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Article OXYGEN RESISTANCE SRTIO3 cells (electric) electrochemistry platinum Schottky barriers solid electrolytes switching titanium compounds vacancies (crystal)