Lee, Suyoun Jeong, Jeung-hyun Lee, Taek Sung Kim, Won Mok Cheong, Byung-ki 2024-01-20T21:32:18Z 2024-01-20T21:32:18Z 2021-09-03 2009-05 0741-3106 https://pubs.kist.re.kr/handle/201004/132530 Using a phase-change memory (PCM) device composed of Ge2Sb2Te5 (GST), We studied the mechanism of the SET-stuck failure (SSF), a constantly low-resistance state during write/erase (W/E) cycling. The SSF state was characterized with increased RESET current and decreased threshold voltage, which were thought to be due to depletion of Ge and enrichment of Sb inside the active volume of GST. Moreover, we found that device characteristics of an SSF-PCM could be recovered by reversing bias polarity and the repaired device could endure many WE cycles, implying that field-induced ion migration was the major cause of the SSF of a PCM. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC A Study on the Failure Mechanism of a Phase-Change Memory in Write/Erase Cycling Article 10.1109/LED.2009.2015222 1 IEEE ELECTRON DEVICE LETTERS, v.30, no.5, pp.448 - 450 IEEE ELECTRON DEVICE LETTERS 30 5 448 450 scie scopus 000265711700008 2-s2.0-67349086445 Engineering, Electrical & Electronic Engineering Article Cycling endurance phase-change memory (PCM) reliability