Kim, J.-B. No, Y.-S. Byun, D. Park, D.-H. Choi, W.-K. 2024-01-20T21:32:36Z 2024-01-20T21:32:36Z 2021-09-02 2009-05 1225-0562 https://pubs.kist.re.kr/handle/201004/132543 ZnO thin film was grown on a sapphire single crystal substrate by plasma assisted molecular beam epitaxy. In addition to near band edge (NBE) emissions, both blue and green luminescences are also observed together. The PL intensity of the blue luminescence (BL) range from 2.7 to 2.9 eV increased as the amount of activated oxygen increased, but green luminescence (GL) was weakly observed at about 2.4 eV without much change in intensity. This result is quite unlike previous studies in which BL and GL were regarded as the transition between shallow donor levels such as oxygen vacancy and interstitial zinc. Based on the transition level and formation energy of the ZnO intrinsic defects predicted through the first principle calculation, which employs density functional approximation (DFA) revised by local density approximation (LDA) and the LDA+U approach, the green and blue luminescence are nearly coincident with the transition from the conduction band to zinc vacancies of V2-Zn and V-Zn, respectively. Korean Blue luminescence Density functional approximations First principle calculations Formation energies Green luminescence Intrinsic defects LDA + U Local density-approximation Luminescent centers Near band edge emissions PL intensity Plasma-assisted molecular beam epitaxy Sapphire single crystal Shallow donors Transition level Zinc vacancy Zn vacancy ZnO ZnO thin film Corundum Crystal growth Electron mobility Luminescence Metallic films Molecular beam epitaxy Molecular beams Molecular dynamics Molecular oxygen Optical films Plasmas Sapphire Semiconducting zinc compounds Semiconductor quantum wires Single crystals Thin film devices Thin films Vacancies Zinc Zinc oxide Oxygen vacancies Blue luminescent center in undoped ZnO thin films grown by plasma-assisted molecular beam epitaxy Article 10.3740/MRSK.2009.19.5.281 1 Korean Journal of Materials Research, v.19, no.5, pp.281 - 287 Korean Journal of Materials Research 19 5 281 287 scopus kci ART001343405 2-s2.0-68549122914 Article Blue luminescence Density functional approximations First principle calculations Formation energies Green luminescence Intrinsic defects LDA + U Local density-approximation Luminescent centers Near band edge emissions PL intensity Plasma-assisted molecular beam epitaxy Sapphire single crystal Shallow donors Transition level Zinc vacancy Zn vacancy ZnO ZnO thin film Corundum Crystal growth Electron mobility Luminescence Metallic films Molecular beam epitaxy Molecular beams Molecular dynamics Molecular oxygen Optical films Plasmas Sapphire Semiconducting zinc compounds Semiconductor quantum wires Single crystals Thin film devices Thin films Vacancies Zinc Zinc oxide Oxygen vacancies Blue luminescence Oxygen vacancy Plasma-assisted molecular beam epitaxy Zn vacancy ZnO thin film