김진상 서상희 2024-01-20T21:34:07Z 2024-01-20T21:34:07Z 2021-09-06 2009-04 1225-5475 https://pubs.kist.re.kr/handle/201004/132602 64×1 forcal plane infrared detector has been fabricated by using HgCdTe epi layer. HgCdTe was grown on GaAs substrate by using metal organic chemical vapor deposition. This paper describes key developments in the epi layer growth and device fabrication process. The performance of IR imaging system is summarized. Korean 한국센서학회 Hg1-xCdxTe를 이용한 64×1 선형 적외선 감지 소자 제작 Fabrication of 64×1 linear array infrared detector using Hg1-xCdxTe Article 2 센서학회지, v.18, no.2, pp.135 - 138 센서학회지 18 2 135 138 kci ART001329630 HgCdTe IR detector MOCVD