Kwon, Hye Young Woo, Jun Taek Lee, Dea Uk Kim, Tae Whan Park, Young Ju 2024-01-20T21:34:12Z 2024-01-20T21:34:12Z 2021-09-03 2009-04 0370-1972 https://pubs.kist.re.kr/handle/201004/132606 Strain potentials, potential profiles, and electronic subband energies of InAs/GaAs coupled double quantum dots (QDs) were calculated by using a finite-difference method (FDM) taking into account shape-based strain effects. The shape of the InAs/GaAs coupled double QDs on the basis of the transmission electron microscopy image was modeled to be a truncated hemi-ellipsoid. The interband transition energies from the ground electronic subband to the ground heavy hole band (E-1-HH1) in the InAs/GaAs coupled double QDs as determined from the FDM calcualtions taking into account strain effects, were in qualitatively reasonable agreement with the excitonic peaks corresponding to the (E-1-HH1) interband transistion eneries at several temperatures as determined from the temperature dependent photoluminescence spectra. English WILEY-V C H VERLAG GMBH Strain effects, potential profiles, and electronic properties of InAs/GaAs coupled double quantum dots with a disk shape Article 10.1002/pssb.200880624 1 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.246, no.4, pp.854 - 857 PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 246 4 854 857 scie scopus 000265403600035 2-s2.0-70449378598 Physics, Condensed Matter Physics Article; Proceedings Paper