Kim, J.S. Song, J.D. Byeon, C.C. Kang, H. Jeong, M.S. Cho, N.K. Park, S.J. Choi, W.J. Lee, J.I. Kim, J.S. Leem, J.-Y. Yim, S.-Y. Ko, D.-K. Lee, J. 2024-01-20T21:34:52Z 2024-01-20T21:34:52Z 2021-09-02 2009-04 1862-6351 https://pubs.kist.re.kr/handle/201004/132634 The coupled GaAs quantum dot molecules (QDMs), which were laterally coupled along the [110] direction, were formed by droplet epitaxy. The optical properties of QDMs were investigated by femtosecond laser excited photoluminescence (PL) measurement. When the laser polarization is parallel to [110] direction on the QDMs, the main PL peak is red-shifted by 55 meV from the PL peak measured with the laser polarization parallel to [110] direction. By changing the excitation power, we found that the emission wavelength of the QDMs was strongly depending on the excitation laser polarization. From this result, we carefully suggested that the confined states in QDMs could be tuned by optical field. ？ 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. English Fabrication of coupled GaAs quantum dots and their optical properties Article 10.1002/pssc.200880613 1 Physica Status Solidi (C) Current Topics in Solid State Physics, v.6, no.4, pp.802 - 805 Physica Status Solidi (C) Current Topics in Solid State Physics 6 4 802 805 N scopus 2-s2.0-70349423887 Conference Paper [110] direction Droplet epitaxy Emission wavelength Excitation lasers Excitation power Femto-second laser GaAs Laser polarization Optical field Photoluminescence measurements Quantum Dot Quantum dot molecules Red-shifted Crystal growth Gallium alloys Laser excitation Lasers Optical properties Optical waveguides Polarization Pulsed laser applications Semiconducting gallium Semiconductor lasers Semiconductor quantum dots GaAs Quantum dots