Kim, Dong Hun Cho, Nam Gyu Kim, Ho-Gi Kim, Il-Doo 2024-01-20T21:35:01Z 2024-01-20T21:35:01Z 2021-09-01 2009-04 1099-0062 https://pubs.kist.re.kr/handle/201004/132639 We investigated indium- (In)-doping effects on the structural and electrical properties of a ZnO film. It was found that structural properties degraded as In-doping content increased, whereas electrical properties improved. We fabricated fully transparent and flexible InGaZnO4 thin film transistors (TFTs) using In-doped ZnO electrodes on polyethylene terephthalate (PET) substrate. The InGaZnO4/MgO-Ba0.6Sr0.4TiO3/3% In-doped ZnO/PET stacks exhibited a high transmittance of 80% in the visible range. The InGaZnO4 TFT with a 3% In-doped ZnO electrode showed a high field effect mobility of 1.04 cm(2)/V s and a moderate on/off ratio of 7.48x10(5). English ELECTROCHEMICAL SOC INC WORK FUNCTION Highly Transparent InGaZnO4 Thin Film Transistors Using Indium-Doped ZnO Electrodes on Plastic Substrate Article 10.1149/1.3098405 1 ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.6, pp.H198 - H201 ELECTROCHEMICAL AND SOLID STATE LETTERS 12 6 H198 H201 scie scopus 000265085000013 2-s2.0-64549139365 Electrochemistry Materials Science, Multidisciplinary Electrochemistry Materials Science Article WORK FUNCTION electrochemical electrodes gallium compounds II-VI semiconductors indium indium compounds magnesium compounds plastics semiconductor doping semiconductor thin films thin film transistors wide band gap semiconductors zinc compounds