Park, Youn Ho Koo, Hyun Cheol Kim, Kyung Ho Kim, Hyung-jun Han, Suk Hee 2024-01-20T22:00:23Z 2024-01-20T22:00:23Z 2021-09-03 2009-03 1226-1750 https://pubs.kist.re.kr/handle/201004/132699 Spin injection from a ferromagnet into an n-doped In0.53Ga0.47As channel was electrically detected by a ferromagnetic detector. At T = 20 K, using non-local and local spin-valve measurements, a non-local signal of 2 mu V and a local spin valve signal of 0.041% were observed when the bias current was 1 mA. The band calculation and Shubnikov-de Haas oscillation measurement in a bulk channel showed that the gate controlled spin-orbit interaction was not large enough to control the spin precession but it could be a worthy candidate for a logic device using spin accumulation and diffusion. English KOREAN MAGNETICS SOC Electrical Spin Transport in n-Doped In0.53Ga0.47As Channels Article 10.4283/JMAG.2009.14.1.023 1 JOURNAL OF MAGNETICS, v.14, no.1, pp.23 - 26 JOURNAL OF MAGNETICS 14 1 23 26 scie scopus kci ART001329340 000271196400006 2-s2.0-70349798836 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Article InGaAs bulk channel non-local measurement local spin-valve measurement electrical spin transport