Lee, Byung Chul Kim, Moo Hyun Krishnan, Jegatha Nambi Kim, Sang Kyung Moon, Sung Lee, Sang Youp Shin, Hyun Joon 2024-01-20T22:01:22Z 2024-01-20T22:01:22Z 2021-09-03 2009-02-11 0957-4484 https://pubs.kist.re.kr/handle/201004/132740 This paper reports for the first time the exact mechanism of the selective metal nanoscale etch method (SMNEM), which is a simply controllable and cost-effective approach for metal nanoscale etching and size reduction. This method is based on the galvanic displacement, Kirkendall effect, and selective etching. The size reduction is linearly controlled by the galvanic displacement in the early stage (1 min). In the later stage, a Kirkendall void is formed between the Ni and Au layer, which is well understood from Fick's law of diffusion. As matching with the experimental results, Ni nanowires with 30 +/- 4 nm width and 50 +/- 7 nm height were easily fabricated from nanostructures with 150 +/- 3 nm width and 110 +/- 2 nm height. The morphology and position of the Ni nanostructures are all predetermined by their initial conditions. Also achieved was the fabrication of complicated three-dimensional nanostructures such as Au nanowires and nanochannels from reduced Ni nanowires by a full replacement reaction. English IOP PUBLISHING LTD NANOSTRUCTURES NANOPARTICLES LITHOGRAPHY KIRKENDALL NANOWIRES The mechanism behind the selective metal nanoscale etch method for precise metal nanopatterning Article 10.1088/0957-4484/20/6/065302 1 NANOTECHNOLOGY, v.20, no.6 NANOTECHNOLOGY 20 6 scie scopus 000262494200010 2-s2.0-65249125772 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article NANOSTRUCTURES NANOPARTICLES LITHOGRAPHY KIRKENDALL NANOWIRES Selective metal nanoscale etch method Kirkendall Effect Galvanic Displacement Selective Etching Nanopatterning Metal nanowires