Yuk, Jong Min Kim, Tae Whan Lee, Jeong Yong No, Young Soo Kim, Dong Hun Choi, Won Kook Jin, Sungho 2024-01-20T22:01:31Z 2024-01-20T22:01:31Z 2021-09-03 2009-02-04 0957-4484 https://pubs.kist.re.kr/handle/201004/132747 Sub-10 nm In(PO3)(3) nanocrystals (NCs) were created in an insulating matrix by rapid thermal annealing to form nanocomposite structures. On annealing at a temperature of 400 degrees C, P2O5 NCs were formed by substituting P for Zn atoms in ZnO films via the kickout diffusion mechanism based on the fixed oxygen sublattice. On annealing at a higher temperature of 600 degrees C, however, In( PO3)(3) NCs were nucleated by diffusion of In atoms from the substrate into the sites of P2O5 NCs that coalesced by moving atoms to neighboring grains in the strain relaxed region. The formation mechanisms of sub-10 nm In( PO3)(3) NCs in an insulating matrix due to rapid thermal annealing are described on the basis of the experimental results. English IOP PUBLISHING LTD SOLID-STATE REACTIONS DIFFUSION TRANSFORMATION SILICON The creation of sub-10 nm In(PO3)(3) nanocrystals in an insulating matrix, and underlying formation mechanisms Article 10.1088/0957-4484/20/5/055703 1 NANOTECHNOLOGY, v.20, no.5 NANOTECHNOLOGY 20 5 scie scopus 000262375700031 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article SOLID-STATE REACTIONS DIFFUSION TRANSFORMATION SILICON