Seong, Han-Kyu Park, Tae-Eon Lee, Seung-Cheol Lee, Kwang-Ryeol Park, Jae-Kwan Choi, Heon-Jin 2024-01-20T22:01:58Z 2024-01-20T22:01:58Z 2021-09-03 2009-02 1598-9623 https://pubs.kist.re.kr/handle/201004/132766 This study reports the magnetic properties of vanadium (V) doped single crystalline silicon carbide nanowires. The first principle calculation indicated that the V-doped cubic SiC phase can exhibit half-metallic ferromagnetic properties that are essential for the realization of spintronic devices. Based on this calculation, V-doped SiC nanowires were fabricated in a chemical vapor deposition process. The single crystalline beta-SiC nanowires, which are doped with ca. 4 at.% of V, had diameters of < 100 mn and a length of several mu m. High-resolution transmission electron microscopy observations revealed vanadium carbide (VC) phases in the nanowires, even at this low concentration of dopants. Magnetic characterization implies that the nanowires are a mixture of the diamagnetic phase of VC and ferro- or paramagnetic phases of V-doped SiC. These results suggest that the doping of transition metal having high solubility to the SiC phase can lead to the realization of dilute magnetic semiconductor behavior at very low temperature. English KOREAN INST METALS MATERIALS TOTAL-ENERGY CALCULATIONS WAVE BASIS-SET GAN SEMICONDUCTORS FERROMAGNETISM SPINTRONICS GROWTH Magnetic Properties of Vanadium-Doped Silicon Carbide Nanowires Article 10.1007/s12540-009-0107-7 1 METALS AND MATERIALS INTERNATIONAL, v.15, no.1, pp.107 - 111 METALS AND MATERIALS INTERNATIONAL 15 1 107 111 scie scopus kci ART001323955 000263833300018 2-s2.0-62149105061 Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Materials Science Metallurgy & Metallurgical Engineering Article TOTAL-ENERGY CALCULATIONS WAVE BASIS-SET GAN SEMICONDUCTORS FERROMAGNETISM SPINTRONICS GROWTH Silicon carbide nanowires Doping Diluted magnetic semiconductor