Kim, Young-Woo Han, Seunghee 2024-01-20T22:02:12Z 2024-01-20T22:02:12Z 2021-09-03 2009-02 1536-1055 https://pubs.kist.re.kr/handle/201004/132776 Silicon-on-insulator (SOI) structure fabricated by plasma source ion implantation (PSII) with high-power pulsed RF plasma has been studied. Oxygen ions were implanted into p-type silicon wafer and high temperature annealing was subsequently used to form SOI structure. The top silicon and the buried oxide (BOX) layer were formed with 500 angstrom and 400 angstrom, respectively, in the sample implanted with the dose of 2.5x10(17) #/cm(2) at the ion energy of -75 kV and annealed at 1350 degrees C for 30 min in Ar+O-2 (0.5 %) ambient. This study showed the possibility of SOI fabrication using the PSII with pulsed ICP source. English TAYLOR & FRANCIS INC Possibility of SOI Fabrication Using Plasma Source Ion Implantation with High-Power Pulsed RF Plasma Article 10.13182/FST09-A7015 1 FUSION SCIENCE AND TECHNOLOGY, v.55, no.2T, pp.209 - 212 FUSION SCIENCE AND TECHNOLOGY 55 2T 209 212 scie scopus 000265186400044 2-s2.0-65249179540 Nuclear Science & Technology Nuclear Science & Technology Article; Proceedings Paper