Jeong, Jeung-hyun Ahn, Hyung-Woo Lee, Suyoun Kim, Won Mok Ha, Jae-Geun Cheong, Byung-ki 2024-01-20T22:03:09Z 2024-01-20T22:03:09Z 2021-09-03 2009-01-05 0003-6951 https://pubs.kist.re.kr/handle/201004/132811 A semiquantitative characterization of the interfacial adhesion of phase change materials is developed, which consists of determining critical adhesion temperature (T-CA) via measuring the probability of adhesion failure with temperature using patterned films. By comparison of T-CA values, Ge-doped SbTe (Ge-ST) is shown to have weaker adhesion than Ge2Sb2Te5 (GST), which results from its limited ability in relaxation of crystallization-induced stress. Nitrogen or oxygen doping in Ge-ST produces significant increase in T-CA, close to that of GST. This improvement is due to smaller grain size of N-/O-doped Ge-ST, which facilitates the relaxation of the stress via grain boundary diffusion or sliding. English AMER INST PHYSICS NONVOLATILE FILMS Analysis and improvement of interfacial adhesion of growth-dominant Ge-doped SbTe phase change materials Article 10.1063/1.3064916 1 APPLIED PHYSICS LETTERS, v.94, no.1 APPLIED PHYSICS LETTERS 94 1 scie scopus 000262357800020 2-s2.0-58149492908 Physics, Applied Physics Article NONVOLATILE FILMS adhesion antimony compounds chalcogenide glasses crystallisation germanium grain boundary diffusion grain size interface phenomena nitrogen oxygen phase change materials slip stress relaxation