Kwon, Hye Young Woo, Jun Taek Lee, Dea Uk Kim, Tae Whan Park, Young Ju 2024-01-20T22:03:18Z 2024-01-20T22:03:18Z 2022-01-25 2009-01 0038-1098 https://pubs.kist.re.kr/handle/201004/132817 Strained potential profiles and electronic subband energies of InAs/GaAs coupled double quantum dots (DQDs) were calculated by using a three-dimensional finite-difference method (FDM) taking into account shape-based strain and nonparabolic effects. The interband transition energies from the ground electronic subband to the ground heavy-hole band (E-1-HH1) in the InAs/GaAs DQDs, as determined from the FDM calculations taking into account strain and nonparabolic effects, were in reasonable agreement with the experimental peaks corresponding to the (E-1-HH1) interband transition energies at several temperatures, as determined from the temperature-dependent photoluminescence spectra. (C) 2008 Published by Elsevier Ltd English PERGAMON-ELSEVIER SCIENCE LTD Effect of strain and nonparabolicity on interband transition energies of InAs/GaAs coupled double quantum dots Article 10.1016/j.ssc.2008.10.013 1 SOLID STATE COMMUNICATIONS, v.149, no.1-2, pp.52 - 55 SOLID STATE COMMUNICATIONS 149 1-2 52 55 N scie scopus 000261785200014 2-s2.0-56349162082 Physics, Condensed Matter Physics Article Nanostructures Electronic states Optical properties