Kang, G. B. Kim, S. -L Kim, Y. T. Park, J. H. 2024-01-20T22:03:51Z 2024-01-20T22:03:51Z 2021-09-03 2009-01 1567-1739 https://pubs.kist.re.kr/handle/201004/132839 Dense and periodic arrays of Au, Cr, Ni and Al nano dots were fabricated on silicon substrate. To obtain nano size patterns, self-assembling resists were used to produce a layer of uniformly distributed parallel cylinders of PMMA in a PS matrix. The PMMA cylinders were degraded and removed by acetic acid rinsing, forming a PS mask to transfer the pattern. The patterned holes of PS template were approximately 20 nm wide, 40 nm deep, and 50 mm apart. About 100 A-thick Au, 30 A-thick Cr, Ni, and Al thin film was deposited by using e-beam evaporator. PS template was removed by lift-off process using N-formyldimethylamine (DMF). Arrays of metal nano dots were dry etched by using fluorine-based reactive ion etching (RIE). As a result, the nano template of PS was analyzed with field-emission scanning electron microscope (FESEM) and the sizes of Cr, Ni, Au and Al nano dots left on Si surface were measured by atomic force microscope (AFM). The sizes of metal nano dots were in the range of 17-22 nm. (C) 2008 Published by Elsevier B.V. English ELSEVIER SCIENCE BV SELF-ASSEMBLED MONOLAYERS ARRAYS Fabrication of metal nano dot dry etching mask using block copolymer thin film Article 10.1016/j.cap.2008.08.012 1 CURRENT APPLIED PHYSICS, v.9, pp.S82 - S84 CURRENT APPLIED PHYSICS 9 S82 S84 scie scopus kci 000262500500024 2-s2.0-55649104963 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article SELF-ASSEMBLED MONOLAYERS ARRAYS Nanodots Soft lithography Block copolymer