Shim, Wooyoung Ham, Jinhee Lee, Kyoung-il Jeung, Won Young Johnson, Mark Lee, Wooyoung 2024-01-20T22:03:59Z 2024-01-20T22:03:59Z 2021-09-03 2009-01 1530-6984 https://pubs.kist.re.kr/handle/201004/132845 A novel stress-induced method to grow semimetallic Bi nanowires along with an analysis of their transport properties is presented. Single crystalline Bi nanowires were found to grow on as-sputtered films after thermal annealing at 260-270 degrees C. This was facilitated by relaxation of stress between the film and the thermally oxidized Si substrate that originated from a mismatch of the thermal expansion. The diameter-tunable Bi nanowires can be produced by controlling the mean grain size of the film, which is dependent upon the thickness of the film. Four-terminal devices based on individual Bi nanowires were found to exhibit very large transverse and longitudinal ordinary magnetoresistance, indicating high-quality, single crystalline Bi nanowires. Unusual transport properties, including a mobility value of 76900 cm(2)/(V s) and a mean free path of 1.35 mu m in a 120 nm Bi nanowire, were observed at room temperature. English AMER CHEMICAL SOC TRANSPORT-PROPERTIES BISMUTH GROWTH On-Film Formation of Bi Nanowires with Extraordinary Electron Mobility Article 10.1021/nl8016829 1 NANO LETTERS, v.9, no.1, pp.18 - 22 NANO LETTERS 9 1 18 22 scie scopus 000262519100004 2-s2.0-61649117006 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article TRANSPORT-PROPERTIES BISMUTH GROWTH