Hwang, Younghun Choi, Jeongyong Hong, Soon Cheol Cho, Sunglae Han, Suk-Hee Shin, Kyung-Ho Jung, Myung-Wha 2024-01-20T22:04:05Z 2024-01-20T22:04:05Z 2021-09-03 2009-01 2469-9950 https://pubs.kist.re.kr/handle/201004/132849 We report that the thermal strain due to the thermal-expansion difference between a Mn film and a semiconductor substrate is strong enough to overcome the thermal energy for a paramagnetic (PM) state and also to break antiferromagnetic (AF) magnetic symmetry, inducing ferromagnetic (FM) ordering at high temperatures. A Mn film on GaAs (100) showed FM ordering up to 9000 A with a Curie temperature (T-C) of over 750 K and a net magnetic moment of 0.33 mu(B)/Mn, instead of AF (Neel temperature, T-N=95 K) and PM orderings in bulk. English AMER PHYSICAL SOC MAGNETIC-PROPERTIES ALPHA-MANGANESE ATOMIC DISORDER FE-AL TRANSITION ALLOYS PRESSURE SURFACE METALS STATE Ferromagnetic ordering in Mn induced by thermal strain Article 10.1103/PhysRevB.79.045309 1 PHYSICAL REVIEW B, v.79, no.4 PHYSICAL REVIEW B 79 4 scie scopus 000262978400069 2-s2.0-59749092049 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Article MAGNETIC-PROPERTIES ALPHA-MANGANESE ATOMIC DISORDER FE-AL TRANSITION ALLOYS PRESSURE SURFACE METALS STATE antiferromagnetic materials Curie temperature ferromagnetic materials high-temperature effects magnetic moments magnetic thin films manganese metallic thin films Neel temperature paramagnetic materials thermal expansion