Ahn, M. -W. Park, K. -S. Heo, J. -H. Park, J. -G. Kim, D. -W. Choi, K. J. Lee, J. -H. Hong, S. -H. 2024-01-20T22:04:36Z 2024-01-20T22:04:36Z 2021-09-01 2008-12-29 0003-6951 https://pubs.kist.re.kr/handle/201004/132868 The effect of oxygen-vacancy-related defects on gas-sensing properties of ZnO-nanowire gas sensors was investigated. Gas sensors were fabricated by growing ZnO nanowires bridging the gap between two prepatterned Au catalysts. The sensor displayed fast response and recovery behavior with a maximum sensitivity to NO2 gas at 225 degrees C. Gas sensitivity was found to be linearly proportional to the photoluminescence intensity of oxygen-vacancy-related defects in both as-fabricated and defect-controlled gas sensors by postannealing in Ar and H-2 atmosphere. This result agrees well with previous theoretical prediction that oxygen vacancies play a role of preferential adsorption sites for NO2 molecules. English AMER INST PHYSICS THIN-FILMS NO2 EMISSION FIELD Gas sensing properties of defect-controlled ZnO-nanowire gas sensor Article 10.1063/1.3046726 1 APPLIED PHYSICS LETTERS, v.93, no.26 APPLIED PHYSICS LETTERS 93 26 scie scopus 000262225700055 2-s2.0-58149268952 Physics, Applied Physics Article THIN-FILMS NO2 EMISSION FIELD adsorption annealing catalysts gas sensors gold II-VI semiconductors nanotechnology nanowires photoluminescence vacancies (crystal) wide band gap semiconductors zinc compounds