권성도 주병권 윤석진 김진상 2024-01-20T22:06:18Z 2024-01-20T22:06:18Z 2021-09-06 2008-12 1226-7945 https://pubs.kist.re.kr/handle/201004/132937 Bismuth-telluride based thin film materials are grown by Metal Organic Chemical Vapor Deposition(MOCVD). A planar type thermoelectric device has been fabricated using p-type Bi0.₄Sb1.6Te₃ and n-type Bi₂Te₃ thin films. Firstly, the p-type thermoelectric element was patterned after growth of 4 μm thickness of Bi0.₄Sb1.6Te₃ layer. Again n-type Bi₂Te₃ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for Bi₂Te₃. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the sample was heated by heating block and the voltage output measured. As expected for a thermoelectric generator, the voltage decreases linearly, while the power output rises to a maximum. The highest estimated power of 1.3 ㎼ is obtained for the temperature difference of 45 K. we provide a promising procedure for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials which may have nanostructure with high thermoelectric properties. Korean 한국전기전자재료학회 MOCVD 법에 의한 Bi-Te계 열전소재 제조 및 박막형 열전소자 제작 Growth of Bi-Te Based Materials by MOCVD and Fabrication of Thermoelectric Thin Film Devices Article 2 전기전자재료학회논문지, v.21, no.12, pp.1135 - 1140 전기전자재료학회논문지 21 12 1135 1140 kci ART001294571 Thin film Thermoelectric Generator Seebeck coefficient MOCVD Bismuth？telluride