Yang, Jin Seok Kim, Seong-Il Kim, Yong Tae Cho, Woon Jo Park, Jung Ho 2024-01-20T22:06:34Z 2024-01-20T22:06:34Z 2021-09-03 2008-12 0026-2692 https://pubs.kist.re.kr/handle/201004/132947 In these days, the researches of non-volatile memory device using nano-crystal(NC)-Si are actively progressing to replace flash memory devices. Many kinds of non-volatile memory devices such as phase-change(P)-RAM, resistance(Re)-RAM, polymer(Po)-RAM, and nano-floating gate memory(NFGM) are being studied. In this work, we study NFGM device in which information is memorized by storing electrons in silicon nanocrystal. The NFGM device has shown great promise for ultra-dense high-endurance memory device for low-power applications IS. Tiwari, et al., Appl. Phys. Lett. 68 (1996) 1377]. and it is able to fabricate IT-type device. Thus, the NFGM is considered to replace existing flash memory device. Non-volatile memory device has been fabricated by using NC-Si particles. The NC-Si particles have broad size range of 1-5 nm and an average size of 2.7 nm, which are sufficiently small to indicate the quantum effect for silicon. The memory window has been analyzed by C-V characteristic of NC-Si particles. V-d-I-d and V-g-I-d characteristics of the fabricated device have also been measured. (c) 2008 Published by Elsevier Ltd. English ELSEVIER SCI LTD ELECTROLUMINESCENCE INTERFACE Electrical characteristics of nano-crystal Si particles for nano-floating gate memory Article 10.1016/j.mejo.2008.03.016 1 MICROELECTRONICS JOURNAL, v.39, no.12, pp.1553 - 1555 MICROELECTRONICS JOURNAL 39 12 1553 1555 scie scopus 000261647800031 2-s2.0-56049086621 Engineering, Electrical & Electronic Nanoscience & Nanotechnology Engineering Science & Technology - Other Topics Article ELECTROLUMINESCENCE INTERFACE Nano-crystal(NC)-Si particles Non-volatile memory device NFGM C-V characteristics I-V characteristics