Choi, Chang-Hak Choi, Joo-Young Cho, Kyung-Hoon Yoo, Myong-Jae Nahm, Sahn Kang, Chong-Yun Yoon, Seok-Jin Kim, Jong-Hee 2024-01-20T22:31:20Z 2024-01-20T22:31:20Z 2021-09-03 2008-11 1099-0062 https://pubs.kist.re.kr/handle/201004/133003 Bi(6)Ti(5)TeO(22) film grown under a low oxygen pressure (OP) of 0.21 Pa showed a low breakdown field of 0.25 MV/cm which increased with increasing the OP to 0.60 MV/cm for the film grown under the OP of 0.59 Pa. The breakdown field decreased when the OP exceeded 0.59 Pa, due to the formation of oxygen interstitial ions. A small amount of Mn doping also increased the breakdown field of the Bi(6)Ti(5)TeO(22) films grown under a low OP. These improvements were related to the decreased number of intrinsic oxygen vacancies identified by the variation of metallic telluride states in the photoemission spectra of the Te 3d level. (C) 2008 The Electrochemical Society. English ELECTROCHEMICAL SOC INC MIM CAPACITORS CERAMICS SUBSTRATE Effect of oxygen vacancies on the electrical properties of Bi(6)Ti(5)TeO(22) thin film Article 10.1149/1.2976795 1 ELECTROCHEMICAL AND SOLID STATE LETTERS, v.11, no.11, pp.G51 - G54 ELECTROCHEMICAL AND SOLID STATE LETTERS 11 11 G51 G54 scie scopus 000259188600017 2-s2.0-51849131665 Electrochemistry Materials Science, Multidisciplinary Electrochemistry Materials Science Article MIM CAPACITORS CERAMICS SUBSTRATE