Kwon, Jae Hyun Koo, Hyun Cheol Chang, Joonyeon Han, Suk-Hee Eom, Jonghwa 2024-01-20T22:31:27Z 2024-01-20T22:31:27Z 2021-09-03 2008-11 0374-4884 https://pubs.kist.re.kr/handle/201004/133007 The gate field effect on spin transport signals was detected in lateral ferromagnet-semiconductor hybrid devices. In the diffusive model, the change in the channel resistance induces a spin transport signal difference, but a non-local measurement shows that Delta R is almost constant with varying the gate voltage. The reason is that the spin diffusion length is slightly decreased with decreasing gate voltage due to the stronger spin-orbit interaction. At T = 20 K, the spin diffusion length call be decreased by 2.5 % by applying a gate voltage of -3 V. English KOREAN PHYSICAL SOC ELECTRICAL DETECTION Gate Field Effect on Spin Transport Signals in a Lateral Spin-Valve Device Article 10.3938/jkps.53.2491 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.5, pp.2491 - 2495 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 53 5 2491 2495 scie scopus kci ART001469615 000260935000027 2-s2.0-57549109688 Physics, Multidisciplinary Physics Article ELECTRICAL DETECTION Gate field Spin-orbit interaction Spin diffusion length Spin-valve device