Shin, S. H. Lim, J. Y. Song, J. D. Kim, H. J. Han, S. H. Kim, T. G. 2024-01-20T22:31:28Z 2024-01-20T22:31:28Z 2021-09-03 2008-11 0374-4884 https://pubs.kist.re.kr/handle/201004/133008 In this study, the effects of various AlSb buffer layers and InAs channel thicknesses on the electrical properties of InAs/AlSb-based 2-dimensional-electron-gas (2-DEG) inverted-High Electron Mobility Transistor (HEMT) structures for applications to spin-Field Effective Transistor (FET) is reported. The optimized similar to 11-nm-thick InAs/AlSb HEMT on AlSb (0.5 mu m)/10 repetition of GaSb/AlSb superlattices/AlSb (1 mu m) shows noticeable values of the electron mobility (similar to 106,900 cm(2)/Vs at 77 K and 25,870 cm(2)/Vs at 300 K) and those are comparable to the state-of-the-art, considering impurity scattering due to doping. English KOREAN PHYSICAL SOC MOBILITY TRANSISTORS ALSB/INAS HEMTS OHMIC CONTACTS INTERFACE TRANSPORT Effects of the AlSb Buffer Layer and the InAs Channel Thickness on the Electrical Properties of InAs/AlSb-Based 2-DEG HEMT Structures Article 10.3938/jkps.53.2719 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.5, pp.2719 - 2724 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 53 5 2719 2724 scie scopus kci 000260935000075 2-s2.0-57349118728 Physics, Multidisciplinary Physics Article MOBILITY TRANSISTORS ALSB/INAS HEMTS OHMIC CONTACTS INTERFACE TRANSPORT Molecular beam epitaxy AlSb InAs 2-DEG HEMT