Youm, Min Soo Kim, Yong Tae Sung, Man Young 2024-01-20T22:32:02Z 2024-01-20T22:32:02Z 2021-09-03 2008-11 1862-6300 https://pubs.kist.re.kr/handle/201004/133030 It is very important to observe the change in the atomic structure of melt-quenched amorphous Ge2Sb2Te5 (GST) to discover the failure mechanism of phase-change random access memory (PRAM) devices during the reset process. We fabricated the phase-change devices and measured the initial resistance changes with various reset pulse amplitudes. For the observation of the atomic structure changes of GST thin films, we designed the specimens for transmission electron microscopy (TEM) and annealed them below and above the melting temperature of GST (Tm = 650 degrees C) before quenching. The annealed-and-quenched GST at 630 degrees C has a hexagonal structure with a grain size of about 10 nm after the partial melting. The annealed-and-quenched GST at 750 degrees C also has a hexagonal structure because of the latent heat. The observed atomic structures of GST are in accordance with the resistance changes inferred from the fabricated edge-contact type of PRAM cell. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim English WILEY-V C H VERLAG GMBH THIN-FILMS CRYSTALLIZATION BEHAVIOR PHASE NUCLEATION Influences of partial melting and overheating on amorphization of Ge2Sb2Te5 during the reset process Article 10.1002/pssa.200824049 1 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.205, no.11, pp.2657 - 2661 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 205 11 2657 2661 scie scopus 000261088200037 2-s2.0-55849098906 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Article THIN-FILMS CRYSTALLIZATION BEHAVIOR PHASE NUCLEATION Ge2Sb2Te5 partial melting PRAM