Song, Yong-Won Lee, Sanggyu Lee, Sang Yeol 2024-01-20T22:32:43Z 2024-01-20T22:32:43Z 2021-08-31 2008-10-15 0022-0248 https://pubs.kist.re.kr/handle/201004/133054 We synthesize zigzagged and straight Ga-doped ZnO nanowires (NWs) carefully controlling the doping-induced stress in the stacked structures of the individual NWs. The analysis of the zigzag shaping is approached with tracking the local stress migration in the NW crystals. Self-designed hot-walled pulsed laser deposition is employed to guarantee the wide window for the condition of successful NW formation. The density and kinetic energy of the laser-ablated particles from a target are optimized by tuning the laser operation condition, and the activation energy for switching the growing crystal directions is adjusted by controlling the synthesis temperature and the catalyst dimension to achieve the zigzagged morphology. The doping into the NWs is verified with photoluminescence measurement at low and room temperatures. Resultant zigzagged ZnO NWs successfully prepared with diversified Ga-doping concentration are analyzed, and compared with each other in terms of the morphology and growth kinetics. (c) 2008 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV ARRAYS TARGET Controlled synthesis of zigzagged and straight Ga-doped ZnO nanowires in hot-walled pulsed laser deposition Article 10.1016/j.jcrysgro.2008.07.119 1 JOURNAL OF CRYSTAL GROWTH, v.310, no.21, pp.4612 - 4615 JOURNAL OF CRYSTAL GROWTH 310 21 4612 4615 scie scopus 000260988600022 2-s2.0-53449091840 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article ARRAYS TARGET Crystal morphology Doping Nanostructures Nanomaterials Oxides Semiconducting II-VI materials