Kim, W. M. Kim, I. H. Ko, J. H. Cheong, B. Lee, T. S. Lee, K. S. Kim, D. Seong, T-Y 2024-01-20T22:32:50Z 2024-01-20T22:32:50Z 2021-09-03 2008-10-07 0022-3727 https://pubs.kist.re.kr/handle/201004/133059 The density-of-state effective masses of impurity doped polycrystalline ZnO thin films were measured by the method of four coefficients technique. By applying the first-order non-parabolicity approximation, the polaron effective mass and the bare band mass at the conduction band minimum, together with the corresponding non-parabolicity parameters, were analysed successfully. The determined perpendicular polaron mass of 0.29 me and the bare band mass of 0.247 me at the conduction band minimum corresponded very well to the previous results obtained for ZnO single crystals. The non-parabolicity parameter of 0.457 eV(-1) derived for the polaron effective mass was larger than 0.33 eV(-1) which was obtained for the bare band mass due to the increasing function of the Frohlich coupling constant with respect to the bare band mass in polycrystalline ZnO films. English IOP PUBLISHING LTD SCATTERING PARAMETER OXIDE-FILMS TRANSPARENT TRANSPORT RESONANCE Density-of-state effective mass and non-parabolicity parameter of impurity doped ZnO thin films Article 10.1088/0022-3727/41/19/195409 1 JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.41, no.19 JOURNAL OF PHYSICS D-APPLIED PHYSICS 41 19 scie scopus 000259441800065 2-s2.0-53349145952 Physics, Applied Physics Article SCATTERING PARAMETER OXIDE-FILMS TRANSPARENT TRANSPORT RESONANCE ZnO Effective mass Non-parabolicity Transparent conducting oxide