Shim, Wooyoung Kim, Dohun Lee, Kyoung-Il Jeon, Kye Jin Ham, Jinhee Chang, Joonyeon Han, Suk-Hee Jeung, Won Young Johnson, Mark Lee, Wooyoung 2024-01-20T22:33:01Z 2024-01-20T22:33:01Z 2021-09-03 2008-10-01 0021-8979 https://pubs.kist.re.kr/handle/201004/133065 The magnetotransport properties of an individual crystalline Bi nanowire have been investigated in the range of 2-300 K using four-point measurements. I-V measurements show that the contacts were Ohmic at both 2 and 300 K, corresponding to resistivities of 1.0x10(-4) and 8.2x10(-5) Omega cm, respectively. The transverse magnetoresistance (MR) (2496% at 110 K) and longitudinal MR (-38% at 2 K) for the Bi nanowire were found to be larger than any values reported in the literature, demonstrating that the Bi nanowires grown by a stress induced method are high-quality single crystalline. The observed transverse and longitudinal MR behaviors in the Bi nanowire are consistent with variations in carrier concentrations as well as electronic structures, such as Fermi level and band overlap, based on simple two band model. (c) 2008 American Institute of Physics. English AMER INST PHYSICS TRANSPORT-PROPERTIES ARRAYS Magnetotransport properties of an individual single-crystalline Bi nanowire grown by a stress induced method Article 10.1063/1.2980277 1 JOURNAL OF APPLIED PHYSICS, v.104, no.7 JOURNAL OF APPLIED PHYSICS 104 7 scie scopus 000260125500077 2-s2.0-54049130438 Physics, Applied Physics Article TRANSPORT-PROPERTIES ARRAYS Bi nanowire magnetoresistance