Lee, Sang Yeol Song, Yong-Won Jeon, Kyung Ah 2024-01-20T22:33:03Z 2024-01-20T22:33:03Z 2021-09-03 2008-10-01 0022-0248 https://pubs.kist.re.kr/handle/201004/133066 We have synthesized the resistance-controlled Ga-doped ZnO nanowires employing self-designed hot-walled pulsed laser deposition, and investigated the status of the Ga-doping highlighting the chemical structure change, the stack-structured morphology, and the optical property of the nanowires. Especially the chemical structure is quantitatively evaluated, verifying that the substitutional Ga atoms and oxygen vacancies are proportional to the Ga-doping concentration. The resultant data of the controlled resistance ranging from 1.6 to 70 M Omega are presented. (C) 2008 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV MOLECULAR-BEAM EPITAXY OPTICAL-PROPERTIES GROWTH TRANSPARENT DEPOSITION FILMS THIN Synthesis and analysis of resistance-controlled Ga-doped ZnO nanowires Article 10.1016/j.jcrysgro.2008.07.049 1 JOURNAL OF CRYSTAL GROWTH, v.310, no.20, pp.4477 - 4480 JOURNAL OF CRYSTAL GROWTH 310 20 4477 4480 scie scopus 000260691000014 2-s2.0-52149094973 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article MOLECULAR-BEAM EPITAXY OPTICAL-PROPERTIES GROWTH TRANSPARENT DEPOSITION FILMS THIN Doping Nanomaterials Physical vapor deposition processes