Park, Young-Seok Park, Ho-Kyun Cho, Sung-Woo Jeong, Jin-A Choi, Kwang-Hyuk Kim, Han-Ki Lee, Jae-Young Lee, Jung-Hwan Bae, Hyo-Dae Tak, Yoon-Heong Choc, Woon-Jo 2024-01-20T22:33:45Z 2024-01-20T22:33:45Z 2021-09-03 2008-10 1099-0062 https://pubs.kist.re.kr/handle/201004/133095 Transparent conducting Al-doped ZnO (AZO) cosputtered indium tin oxide indium tin oxide (ITO) electrodes (150 nm) were grown by dual target dc magnetron sputtering at room temperature for organic light-emitting diodes (OLEDs). It was found that the sheet resistance, resistivity, optical transmittance, figure of merit, and work function of AZO cosputtered ITO electrodes were significantly influenced by the dc power of the AZO target at constant dc power of the ITO target. Even though the structure of the AZO cosputtered ITO electrode is amorphous due to a low substrate temperature (similar to 50 degrees C), the AZO cosputtered ITO electrode shows an electrical resistivity of 4.6x10(-4) Omega cm, an optical transmittance of 85% (550 nm wavelength), a figure-of-merit value of 9.83x10(-3) Omega(-1), and a work function of 5.2 eV at 20 W of dc power of the AZO target. The current density and luminance of the OLED fabricated on the 20 W AZO cosputtered ITO anode are higher than that of the OLED with an amorphous ITO anode, indicating the possibility of the AZO cosputtered ITO electrode as an amorphous transparent conducting oxide for OLEDs. English ELECTROCHEMICAL SOC INC OXIDE THIN-FILMS Transparent conducting AZO cosputtered ITO anode films grown by a dual target DC magnetron sputtering for OLEDs Article 10.1149/1.2976160 1 ELECTROCHEMICAL AND SOLID STATE LETTERS, v.11, no.11, pp.J85 - J88 ELECTROCHEMICAL AND SOLID STATE LETTERS 11 11 J85 J88 scie scopus 000259188600028 2-s2.0-51849132811 Electrochemistry Materials Science, Multidisciplinary Electrochemistry Materials Science Article OXIDE THIN-FILMS 스퍼터링 AZO LED Sputtering