Colleaux, Florian Lee, Jungil Yu, Byung Yong Han, Ilki Choi, Won Jun Song, Jin Dong Ghibaudo, Gerard 2024-01-20T22:33:58Z 2024-01-20T22:33:58Z 2021-09-03 2008-10 1533-4880 https://pubs.kist.re.kr/handle/201004/133105 After rapid thermal annealing (RTA), deep levels were found to be generated in Au/GaAs Schottky diodes embedded with InAs quantum dots grown by migration enhanced molecular beam epitaxy (MEMBE). From the corner frequency of the 1/f(2) part of the low-frequency noise specrtral density, the locations of the deep levels were estimated to be 0.58, 0.61, and 0.66 eV below the conduction band edge for the samples without quantum dot layer, with quantum dot layer and capping layer thickness of 0.8 mu m, and with quantum dot layer and the capping layer thickness of 0.4 mu m, respectively. RTA also lowered the Schottky barrier height. English AMER SCIENTIFIC PUBLISHERS Effect of Rapid Thermal Annealing on the Electrical Properties of GaAs Schottky Diodes Embedded with Self-Assembled InAs Quantum Dots Article 10.1166/jnn.2008.1343 1 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.8, no.10, pp.5558 - 5560 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 8 10 5558 5560 scie scopus 000261390500138 2-s2.0-58149263828 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article; Proceedings Paper InAs Quantum Dots Schottky Diodes Thermal Annealing Deep Levels Low-Frequency Noise