Kim, Chang-Sam Kim, Shin-Woo 2024-01-20T22:34:02Z 2024-01-20T22:34:02Z 2021-09-03 2008-10 1229-9162 https://pubs.kist.re.kr/handle/201004/133109 In this study, a novel and interesting method to grow beta-Si3N4 whiskers was developed using thermal decomposition Si3N4 and large pores introduced intentionally during liquid phase sintering. The pore size, pore vol%, pore morphology and nitrogen pressure were chosen as experimental variables to find proper conditions for growing whiskers. In this experiment, commercial alpha-Si3N4, Al2O3 and Y2O3 were selected as starting materials, and polymer beads with average diameters of 100 and 200 mu m were used as pore formers to make intentional pores in the sintered sample. A polyvinyl film was also used to make a film type of pore. beta-Si3N4 whiskers grew well on the inside of pores in the case of a low vol% of pores, 14 and 27 vol% or closed pores of a film shape, but not for a high vol% of pore, 39 and 50 vol% or open pores of a film shape. The variation of pore size, pore morphology and nitrogen pressure did not have any influence on whisker growth. English KOREAN ASSOC CRYSTAL GROWTH, INC SILICON-NITRIDE WHISKERS SI3N4 MECHANISM A new process to grow beta-Si3N4 whiskers using thermal decomposition and closed pores Article 1 JOURNAL OF CERAMIC PROCESSING RESEARCH, v.9, no.5, pp.506 - 508 JOURNAL OF CERAMIC PROCESSING RESEARCH 9 5 506 508 scie scopus kci ART001467859 000261207400017 2-s2.0-57349160828 Materials Science, Ceramics Materials Science Article SILICON-NITRIDE WHISKERS SI3N4 MECHANISM Si3N4 whiskers Thermal decomposition Sintering Open pores Closed pores