Lee, Jungil Yu, Byung Yong Han, Ilki Choi, Kyoung Jin Ghibaudo, Gerard 2024-01-20T22:34:13Z 2024-01-20T22:34:13Z 2021-09-03 2008-10 1533-4880 https://pubs.kist.re.kr/handle/201004/133118 In this work analytic model for generation of excess low-frequency noise in nanorod devices such as field-effect transistors are developed. In back-gate field-effect transistors where most of the surface area of the nanorod is exposed to the ambient, the surface states could be the major noise source via random walk of electrons for the low-frequency or 1/f noise. In dual gate transistors, the interface states and oxide traps can compete with each other as the main noise source via random walk and tunneling, respectively. English AMER SCIENTIFIC PUBLISHERS FIELD-EFFECT TRANSISTORS CARBON NANOTUBES ELECTRICAL CHARACTERISTICS ZNO NANORODS 1/F NOISE FABRICATION NANOWIRES Analytic Model for Low-Frequency Noise in Nanorod Devices Article 10.1166/jnn.2008.1034 1 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.8, no.10, pp.5257 - 5260 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 8 10 5257 5260 scie scopus 000261390500073 2-s2.0-58149265330 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article; Proceedings Paper FIELD-EFFECT TRANSISTORS CARBON NANOTUBES ELECTRICAL CHARACTERISTICS ZNO NANORODS 1/F NOISE FABRICATION NANOWIRES Nanorods Field-Effect Transistors Low-Frequency Noise Surface States Oxide Traps