Oh, Min Suk Lee, Kimoon Song, J. H. Lee, Byoung H. Sung, Myung M. Hwang, D. K. Im, Seongil 2024-01-20T22:34:30Z 2024-01-20T22:34:30Z 2021-09-02 2008-10 0013-4651 https://pubs.kist.re.kr/handle/201004/133132 We report on the fabrication of gate-stable ZnO thin-film transistors (TFTs) with aluminum oxide dielectric. When an off-stoichiometric AlOx was deposited at room temperature, the ZnO-TFT revealed unreliable transfer characteristics: a large drain current-gate bias (I-D-V-G) hysteresis and a large amount of threshold voltage (V-T) shift under gate-bias stress. As rapid thermal annealing (RTA) in O-2 ambient was applied onto AlOx at 300 degrees C prior to ZnO channel deposition, the gate-bias reliability of the ZnO device was improved. The RTA might cause our AlOx surface to be more stoichiometric and thus to be resistant against ZnO sputter-induced damage. When the bottom-gate ZnO-TFT was fabricated with a stoichiometric Al2O3 dielectric grown by atomic layer deposition (ALD), our device showed much more stable electrical characteristics than with the sputter-deposited off-stoichiometric AlOx. Last, as an ultimate effort to improve the gate reliability, we fabricated a top-gate ZnO-TFT device adopting the same thick ALD-grown stoichiometric Al2O3 as in the bottom-gate device. Our top-gate device with the Al2O3 dielectric then showed no hysteresis and no V-T shift after several times of gate bias sweep. We conclude that both the high quality dielectric and optimized device structure are necessary to realize electrically stable ZnO-TFTs. (C) 2008 The Electrochemical Society. [DOI: 10.1149/1.2994629] All rights reserved. English ELECTROCHEMICAL SOC INC TRANSPARENT PERFORMANCE TFT Improving the Gate Stability of ZnO Thin-Film Transistors with Aluminum Oxide Dielectric Layers Article 10.1149/1.2994629 1 JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.12, pp.H1009 - H1014 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 155 12 H1009 H1014 scie scopus 000260479700082 2-s2.0-54949102088 Electrochemistry Materials Science, Coatings & Films Electrochemistry Materials Science Article TRANSPARENT PERFORMANCE TFT thin film transistor gate zno