Khan, M. Wasi Kumar, Ravi Choudhary, R. J. Srivastava, J. P. Patil, S. I. Choi, W. K. 2024-01-20T22:35:01Z 2024-01-20T22:35:01Z 2021-09-03 2008-09-07 0022-3727 https://pubs.kist.re.kr/handle/201004/133153 The electrical transport and 1/f conduction noise properties of LaFe1-xNixO3 (x = 0.3, 0.4 and 0.5) thin films have been studied. The temperature dependent resistivity data have been fitted with Mott's variable-range hopping model. From the resistivity data we have estimated various parameters, namely, the hopping distance (R-h), the hopping energy (E-h) and the density of states at the Fermi level (N(E-F)). The decrease in the hopping energy and the increase in the density of states at room temperature have been observed with the increase in Ni doping for all samples. The Ni doping increases the density of charge carriers and enhances delocalization induced phenomena in the system. The magnitude of the normalized noise S-V/V-2 increases with the decrease in the Ni concentration over the whole temperature range. The conduction noise is also proportional to the square of the bias current, which confirms that the noise arises from the conduction fluctuations. The Hooge parameter (gamma) calculated at room temperature is compared with its value in semiconductors and manganite/oxide materials. The observed features have been explained on the basis of charge-carrier doping in LaFeO3. The noise measurements in conjugation with the electrical properties of the film propose the propitious characteristic of the system. English IOP PUBLISHING LTD TRANSITION-METAL COMPOUNDS GAAS EPITAXIAL LAYERS GIANT MAGNETORESISTANCE ELECTRONIC-STRUCTURE RARE-EARTH 1-F NOISE MANGANITES Electrical transport and 1/f noise properties of LaFe1-xNixO3 (x=0.3, 0.4 and 0.5) thin films Article 10.1088/0022-3727/41/17/175409 1 JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.41, no.17 JOURNAL OF PHYSICS D-APPLIED PHYSICS 41 17 scie scopus 000258680500064 2-s2.0-54749109509 Physics, Applied Physics Article TRANSITION-METAL COMPOUNDS GAAS EPITAXIAL LAYERS GIANT MAGNETORESISTANCE ELECTRONIC-STRUCTURE RARE-EARTH 1-F NOISE MANGANITES LaFeNiO3 electrical transport 1/f noise Hooge parameter